linear & power amplifiers - smt 6 6 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc283lm1 smt medium power gaas mmic amplifier, 17 - 40 ghz v04.1201 general description features functional diagram smt mmwave package psat output power: +21 dbm high gain: 21 db no external matching required electrical speci cations, t a = +25 c, vdd= +3.5v*, ldd = 300 ma typical applications the hmc283lm1 is a medium power ampli er (mpa) in a smt leadless chip carrier package covering 17 to 40 ghz. the lm1 is a true surface mount broadband millimeterwave package offering low loss & excel- lent i/o match preserving mmic chip performance. utilizing a gaas phemt process, the device offers 20 db gain and +21 dbm ouput power from a bias supply of +3.5v @ 300ma. as an alternative to chip- and-wire hybrid assemblies the hmc283lm1 elimi- nates the need for wirebonding, thereby providing a consistent connection interface for the customer. the ampli er may be used as a frequency doubler. a built-in-test pad (vdet) allows monitoring of micro- wave output power. all data is with the non-hermetic, epoxy sealed lm1 packaged mpa device mounted in a 50 ohm test xture. the hmc283lm1 is ideal for: ? millimeterwave point-to-point radios ? lmds ? satcom parameter min. typ. max. min. typ. max. units frequency range 17 - 40 21 - 30 ghz gain 15 20 17 22 db gain variation over temperature 0.05 0.07 0.05 0.07 db/c input return loss 6 10 6 12 db output return loss 4 7 4 8 db reverse isolation 30 40 35 45 db output power for 1 db compression (p1db) 14 18 14 18 dbm saturated output power (psat) 17 21 17 21 dbm output third order intercept (ip3) 22 27 21 27 dbm noise figure 10 10 db supply current (idd) 300 330 300 330 ma *vdd = +3.5v, adjust vgg = vgg1, vgg2 between -2.0 to +0.4v to achieve idd = 300 ma typical.
linear & power amplifiers - smt 6 6 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com reverse isolation vs. temperature input return loss vs. temperature broadband gain & return loss gain vs. temperature p1db and psat @ 25 c output return loss vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 25 30 10 15 20 25 30 35 40 s11 s21 s22 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 +25 c +85 c -40 c return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 +25 c +85 c -40 c reverse isolation (db) frequency (ghz) -20 -15 -10 -5 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 +25 c +85 c -40 c return loss (db) frequency (ghz) 13 15 17 19 21 23 25 16 18 20 22 24 26 28 30 32 34 36 38 40 output p1db & psat (dbm) frequency (ghz) psat p1db 0 5 10 15 20 25 30 16 18 20 22 24 26 28 30 32 34 36 38 40 42 +25 c +85 c -40 c gain (db) frequency (ghz) hmc283lm1 smt medium power gaas mmic amplifier, 17 - 40 ghz v04.1201
linear & power amplifiers - smt 6 6 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com p1db vs. temperature psat vs. temperature power compression @ 20 ghz output ip3 vs. temperature power compression @ 28 ghz power compression @ 39 ghz frequency (ghz) temperature 20 28 38 -40 c 29.0 28.0 31.0 +25 c 28.5 27.5 28.5 +85 c 27.5 26.0 24.5 all levels in dbm 0 4 8 12 16 20 24 -10-8-6-4-20246810 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 -10-8-6-4-20246810 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 13 15 17 19 21 23 25 16 18 20 22 24 26 28 30 32 34 36 38 40 +25 c -55 c +85 c psat (dbm) frequency (ghz) 0 4 8 12 16 20 24 -10-8-6-4-20246810 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 13 15 17 19 21 23 25 16 20 24 28 32 36 40 +25 c -40 c +85 c output p1db (dbm) frequency (ghz) frequency (ghz) hmc283lm1 smt medium power gaas mmic amplifier, 17 - 40 ghz v04.1201
linear & power amplifiers - smt 6 6 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings notes: 1. material: plastic 2. plating: gold over nickel 3. dimensions are in inches [millimeters]. 4. all tolerances are 0.005 [ 0.13]. 5. all grounds must be soldered to pcb rf ground. 6. ? indicates pin 1 drain bias voltage (vdd) +5vdc drain bias current (idd) 400 ma gate bias voltage (vgg1, vgg2) -2.0 to +0.4 vdc gate bias current (igg) 4.0 ma rf input power (rfin)(vdd = +3.5 vdc) +8 dbm channel temperature 175 c continuous pdiss (t = 85 c) (derate 16 mw/c above 85 c) 1.44 w thermal resistance (channel to ground paddle) 62.5 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c pin function 1gnd 2vdd 3gnd 4 rf out 5vdet 6vgg2 7vgg1 8rf in hmc283lm1 smt medium power gaas mmic amplifier, 17 - 40 ghz v04.1201 electrostatic sensitive device observe handling precautions
linear & power amplifiers - smt 6 6 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com evaluation pcb the grounded co-planar wave guide (cpwg) pcb input/output transitions allow use of ground-signal-ground (gsg) probes for testing. suggested probe pitch is 400um (16 mils). alternatively, the board can be mounted in a metal housing with 2.4 mm coaxial connectors. evaluation circuit board layout design details lm1 evaluation pcb lm1 package mounted to evaluation pcb layout technique micro strip to cpwg material rogers 4003 with 1/2 oz. cu dielectric thickness 0.008 (0.20 mm) microstrip line width 0.018 (0.46 mm) cpwg line width 0.016 (0.41 mm) cpwg line to gnd gap 0.005 (0.13 mm) ground via hole diameter 0.008 (0.20 mm) c1 100 pf capacitor, 0402 pkg. c2 33,000 pf capacitor, 1206 pkg. r1 1,000 ohm resistor, 0402 pkg. r2 100 ohm resistor, 0402 pkg. hmc283lm1 smt medium power gaas mmic amplifier, 17 - 40 ghz v04.1201
linear & power amplifiers - smt 6 6 - 7 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com suggested lm1 pcb land pattern tolerance: 0.003 ( 0.08 mm) ampli er application circuit note: vgg1 and vgg2 may be connected to a common vgg feed. for optimal stable operation, it is recommended that a voltage divider network be employed as shown above with vgg set to achieve ldd = 300 ma typical. recommended component values c1 100 pf c2 33,000 pf r1 1,000 ohm r2 100 ohm hmc283lm1 smt medium power gaas mmic amplifier, 17 - 40 ghz v04.1201
linear & power amplifiers - smt 6 6 - 8 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com the hmc lm1 package was designed to be compatible with high volume surface mount pcb assembly processes. the lm1 package requires a speci c mounting pattern to allow proper mechanical attachment and to optimize electrical performance at millimeterwave frequencies. the pcb layout pattern can be found on each lm1 product data sheet. it can also be provided as an electronic drawing upon request from hittite sales & application engineering. follow these precautions to avoid permanent damage: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. lm1 devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc & ground contact areas. static sensitivity: follow esd precautions to protect against esd strikes. general handling: handle the lm1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. avoid damaging the rf, dc, & ground contacts on the package bottom. do not apply excess pressure to the top of the lid. solder materials & temperature pro le: follow the information contained in the application note. hand soldering is not recommended. conductive epoxy attachment is not recommended. solder paste solder paste should be selected based on the users experience and should be compatible with the metallization systems used. see the lm1 data sheet outline drawing for pin & ground contact metallization schemes. solder paste application solder paste is generally applied to the pcb using either a stencil printer or dot placement. the volume of solder paste will be dependent on pcb and component layout and should be controlled to ensure consistent mechanical & electrical performance. excess solder may create unwanted electrical parasitics at high frequencies. solder re ow the soldering process is usually accomplished in a re ow oven but may also use a vapor phase process. a solder re ow pro le is suggested above. prior to re owing product, temperature pro les should be measured using the same mass as the actual assemblies. the thermocouple should be moved to various positions on the board to account for edge and corner effects and varying component masses. the nal pro le should be determined by mounting the thermocouple to the pcb at the location of the device. follow solder paste and oven vendors recommendations when developing a solder re ow pro le. a standard pro le will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. allow enough time between reaching pre-heat temperature and re ow for the solvent in the paste to evaporate and the ux to completely activate. re ow must then occur prior to the ux being completely driven off. the duration of peak re ow temperature should not exceed 15 seconds. packages have been quali ed to withstand a peak temperature of 235 0 c for 15 seconds. verify that the pro le will not expose the device to temperatures in excess of 235 0 c. cleaning a water-based ux wash may be used. recommended smt attachment technique preparation & handling of the lm1 millimeterwave package for surface mounting 25 50 75 100 125 150 175 200 225 012345678 temperature ( 0 c) time (min) recommended solder reflow profile for hmc lm1 smt package hmc283lm1 smt medium power gaas mmic amplifier, 17 - 40 ghz v04.1201
linear & power amplifiers - smt 6 6 - 9 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com alternate applications: frequency multiplier performance voltage detector, built-in-test (b.i.t.) -10 -7 -4 -1 2 5 10 15 20 25 30 35 40 10 dbm 15 dbm 18 dbm conversion loss (db) output frequency (ghz) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 10 12 14 16 18 20 22 18 ghz 22 ghz 28 ghz 38 ghz detected voltage into 10k resistor (volts) output power (dbm) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 10 12 14 16 18 20 22 detected voltage into 10k resistor (volts) output power (dbm) -55 c +85 c +25 c hmc283lm1 can also perform as a frequency multiplier. this is accomplished by biasing vg1 into its pinchoff region - typically -1v to -2v. by adjusting the vg1 bias, the device will operate as a doubler or tripler. vg2 may also be adjusted to minimize the levels of unwanted harmonics. the plot shows the performance of hmc283 operated as a doubler with vg1 = -1v and the remaining gate voltages (vg2, 3, 4) set to -0.15v. in this condition the ampli er draws 310ma at 3.5v drain bias (vdd) and provides +5db to -5db conversion loss dependent upon the output fre- quency. by connecting the vdet port to a 10k ohm resistor and monitoring the voltage, a b.i.t. circuit can be created to monitor changes in the device output power. this circuit is extremely well compensated for temperature variations as shown in the rst plot. the detected voltage does change with frequency and the second plot shows its variation. hmc283lm1 smt medium power gaas mmic amplifier, 17 - 40 ghz v04.1201
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